mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 67

• Manufacturer Part Number: mt45w8mw16bgx
• Description: 128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Figure 55:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
DQ[15:0]
LB#/UB#
A[22:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CE#
Asynchronous WRITE Followed by Asynchronous READ
Notes:
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
High-Z
1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least
Valid Address
t AVS
t WHZ
t AS
t VP
t CVS
5ns (
after CE#-controlled WRITEs.
t CW
t WP
t
Data
CPH) to schedule the appropriate refresh interval. Otherwise,
t AVH
t DH
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
t WPH
t WC
t AS
Valid Address
t AW
t BW
t VS
t DW
Data
t WR
67
Note 1
t CPH
V
V
OH
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
High-Z
t BLZ
t LZ
t AA
Valid Address
Don’t Care
t OLZ
t OE
©2004 Micron Technology, Inc. All rights reserved.
Valid Output
t
CPH is only required
Undefined
t HZ
t OHZ
t BHZ