mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 59

• Manufacturer Part Number: mt45w8mw16bgx
• Description: 128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Figure 47:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
2nd Cycle READ
2nd Cycle READ
2nd Cycle READ
DQ[15:0] OUT
LB#/UB#
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
Burst READ Interrupted by Burst READ or WRITE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
IH
IL
OH
Notes:
t CSP
t SP
t SP t HD
t SP t HD
Address
Valid
t HD
1. Non-default BCR settings for burst READ interrupted by burst READ or WRITE: Fixed or vari-
2. Burst interrupt shown on first allowable clock (for example, after the first data received by
3. CE# can stay LOW between burst operations, but CE# must not remain LOW longer than
able latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. All
bursts shown for variable latency; no refresh collision.
the controller).
t
CEM.
High-Z
t ACLK
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
t CLK
t BOE
Output
2nd Cycle WRITE
2nd Cycle WRITE
2nd Cycle WRITE
Valid
t KOH
DQ[15:0] IN
t CEW
LB#/UB#
t SP
t SP t HD
t SP t HD
Address
Valid
OE#
t HD
t KHTL
t OHZ
59
READ Burst interrupted with new READ or WRITE. See Note 2.
t CEM (Note 3)
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
High-Z
High-Z
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
t BOE
Output
Valid
t SP
D0
t KOH
t ACLK
t HD
Output
Valid
D1
Don’t Care
©2004 Micron Technology, Inc. All rights reserved.
Output
Valid
D2
Output
Valid
D3
t HD
t OHZ
Undefined
High-Z