mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 63

• Manufacturer Part Number: mt45w8mw16bgx
• Description: 128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Figure 51:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
DQ[15:0]
LB#/UB#
A[22:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CLK
CE#
VIH
VIL
VIH
VIH
VIH
VIH
VIH
VIH
VOH
VOL
VIL
VIL
VIL
VIL
VIL
VIL
VIH
VIL
Asynchronous WRITE (ADV# LOW) Followed by Burst READ
High-Z
Notes:
Valid Address
t CW
t WC
t WP
Data
t DH
t WPH
1. Non-default BCR settings for asynchronous WRITE, with ADV# LOW, followed by burst
2. When transitioning between asynchronous and variable-latency burst operations, CE# must
t WC
READ: Fixed or variable latency; latency code two (three clocks); WAIT active LOW; WAIT
asserted during delay.
go HIGH. CE# can stay LOW when transitioning to fixed-latency burst READs. A refresh
opportunity must be provided every
following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
Valid Address
t AW
t BW
t DW
Data
t WC
t WR
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
Note 2
t CBPH
Valid Address
t CSP
VOH
VOL
t CEW
t SP
t SP
t SP
t SP t HD
t HD
t HD
High-Z
t CLK
63
t
CEM. A refresh opportunity is satisfied by either of the
t ACLK
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
t BOE
Output
Valid
t KOH
Output
Valid
Don’t Care
©2004 Micron Technology, Inc. All rights reserved.
Output
Valid
Output
Valid
t HD
Undefined
t OHZ
High-Z