mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 55

• Manufacturer Part Number: mt45w8mw16bgx
• Description: 128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Figure 43:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
Burst WRITE Operation – Variable Latency Mode
t AS
t AS
Notes:
WRITE Burst Identified
3
3
(WE# = LOW)
t SP
t CSP
t SP
Address
t SP
High-Z
t CEW
Valid
1. Non-default BCR settings for burst WRITE operation in variable latency mode: Latency code
2. WAIT asserts for LC cycles for both fixed and variable latency. LC = latency code
3.
t HD
t HD
t HD
two (three clocks); WAIT active LOW; WAIT asserted during delay; burst length of four;
burst-wrap enabled.
(BCR[13:11]).
t
AS required if
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
Note 2
t
CSP > 20ns.
t CLK
t KHTL
t SP
55
t SP t HD
t CEM
D1
t HD
t KP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
D2
t KP
D3
t KHKL
©2004 Micron Technology, Inc. All rights reserved.
D0
t HD
t HZ
t CBPH
Don’t Care
High-Z