mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 23

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mt45w8mw16bgx

Manufacturer Part Number
mt45w8mw16bgx
Description
128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
Manufacturer
Micron Semiconductor Products
Datasheet

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Figure 17:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
Read Configuration Register
Notes:
1. It is possible that the data stored at the highest memory location will be altered if the
ADDRESS
LB#/UB#
data at the falling edge of WE# is not 0000h, 0001h, or 0002h.
DATA
WE#
OE#
CE#
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
Address
XXXXh
(MAX)
READ
Address
XXXXh
(MAX)
READ
23
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RCR: 0000h
BCR: 0001h
DIDR: 0002h
Page/Burst CellularRAM 1.5 Memory
Address
(MAX)
WRITE
0ns (min) Note 1
CR Value
Address
(MAX)
READ
Don't Care
Out
©2004 Micron Technology, Inc. All rights reserved.

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