mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet

mt45w8mw16bgx

Manufacturer Part Number

mt45w8mw16bgx

Description

128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT45W8MW16BGX.pdf (68 pages)

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Async/Page/Burst CellularRAM

MT45W8MW16BGX

Features

• Single device supports asynchronous, page, and

• V

• Random access time: 70ns

• Burst mode READ and WRITE access

• Page mode READ access

• Low power consumption

• Low-power features

PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65

128mb_burst_cr1_5_p26z__1.fm - Rev. H 9/07 EN

Options

• Configuration

• Package

• Timing

burst operations

– 1.70–1.95V V

– 1.7–3.6V

– 4, 8, 16, or 32 words, or continuous burst

– Burst wrap or sequential

– MAX clock rate: 133 MHz (

– Burst initial latency: 35ns (5 clocks) at 133 MHz

–

– Sixteen-word page size

– Interpage READ access: 70ns

– Intrapage READ access: 20ns

– Asynchronous READ: <25mA

– Intrapage READ: <15mA

– Initial access, burst READ:

– Continuous burst READ: <40mA

– Standby: <50µA (TYP at 25 °C)

– Deep power-down: <3µA (TYP)

– On-chip temperature-compensated refresh (TCR)

– Partial-array refresh (PAR)

– Deep power-down (DPD) mode

– 8 Meg x 16

– V

– 54-ball VFBGA—“green”

– 70ns access

– 85ns access

(37.5ns [5 clocks] at 133 MHz) <45mA

ACLK: 5.5ns at 133 MHz

, V

Q I/O voltage: 1.7–3.6V

core voltage: 1.70–1.95V

Q voltages

Products and specifications discussed herein are subject to change by Micron without notice.

CLK = 7.5ns)

128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/

MT45W8MW16B

Designator

–70

–85

Figure 1:

Notes: 1. The 3.6V I/O and the 133MHz clock fre-

Options (continued)

• Frequency

• Standby power at 85°C

• Operating temperature range

– 66 MHz

– 80 MHz

– 104 MHz

– 133 MHz

– Standard: 200µA (MAX)

– Low power: 160µA (MAX)

– Wireless (–30°C to +85°C)

– Industrial (–40°C to +85°C)

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Page/Burst CellularRAM 1.5 Memory

MT45W8MW16BGX-7013LWT

quency exceed the CellularRAM 1.5 Work-

group specification.

DQ14

DQ15

WAIT

54-Ball VFBGA Ball Assignment

DQ8

DQ9

A18

LB#

Part Number Example:

1.5

DQ10

DQ11

DQ12

DQ13

OE#

UB#

A19

CLK

(Ball Down)

ADV#

A17

A21

A14

A12

Top View

A16

A15

A13

A10

A22

DQ1

DQ3

DQ4

DQ5

WE#

CE#

A11

RFU

DQ0

DQ2

DQ6

DQ7

CRE

A20

RFU

Designator

None

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