mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 35

• Manufacturer Part Number: mt45w8mw16bgx
• Description: 128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Table 11:
Figure 25:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
Description
Partial-array refresh standby
current
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
–30
PAR Specifications and Conditions
Typical Refresh Current vs. Temperature (I
–20
Notes:
–10
1. I
must be driven to either V
power-up or when entering standby mode.
0
PAR
V
IN
Conditions
CE# = V
(MAX) values measured at 85°C. In order to achieve low standby current, all inputs
= V
10
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
CC
Q or 0V,
Temperature (°C)
CC
20
Q
30
I
PAR
40
CC
Q or V
35
Low-power option
Symbol
(no designation)
Standard power
50
SS
TCR
. I
(L)
60
PAR
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
might be slightly higher for up to 500ms after
70
80
Partition
Array
Full
Full
1/2
1/4
1/8
1/2
1/4
1/8
0
0
90
©2004 Micron Technology, Inc. All rights reserved.
PAR = Full array
PAR = 1/2 of array
PAR = 1/4 of array
PAR = 1/8 of array
PAR = None of array
Max
200
170
155
150
140
160
130
115
110
100
Units
µA
µA