mt45w8mw16bgx Micron Semiconductor Products, mt45w8mw16bgx Datasheet - Page 62

• Manufacturer Part Number: mt45w8mw16bgx
• Description: 128mb 8 Meg X 16 Async/page/burst Cellularram 1.5 Async/ Page/burst Cellularram 1.5 Memory
• Manufacturer: Micron Semiconductor Products

Figure 50:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
DQ[15:0]
LB#/UB#
A[22:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
OH
OL
IH
IL
IH
IL
IH
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
Asynchronous WRITE Followed by Burst READ
High-Z
Notes:
Valid Address
t AS
t AVS
t CVS
t VP
t CW
t WC
t WP
Data
t AVH
t DH
1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Fixed or variable
2. When transitioning between asynchronous and variable-latency burst operations, CE# must
t WPH
t WC
latency; latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
go HIGH. CE# can stay LOW when transitioning to fixed-latency burst READs. A refresh
opportunity must be provided every
following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
Valid Address
t AW
t BW
t VS
t AS
t DW
Data
t WC
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
t WR
t CBPH
Note 2
Valid Address
t CSP
V
V
t SP
t CEW
t SP
OH
OL
t SP
t SP t HD
t HD
t HD
t CLK
High-Z
62
t ACLK
t
CEM. A refresh opportunity is satisfied by either of the
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t BOE
Page/Burst CellularRAM 1.5 Memory
Output
Valid
t KOH
Output
Valid
Don’t Care
Output
Valid
©2004 Micron Technology, Inc. All rights reserved.
Output
Valid
t HD
t OHZ
Undefined
High-Z