mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 66

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Table 38:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
Current State
Any
Idle
Row active, active,
or precharge
Read (auto
precharge
disabled)
Write (auto
precharge
disabled)
Read (with auto-
precharge)
Write (with auto-
precharge)
Truth Table – Current State Bank n – Command to Bank m
Notes: 1–6 apply to the entire table
Notes:
CS#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after
2. This table describes an alternate bank operation, except where noted (the current state is
3. Current state definitions:
RAS#
(if the previous state was self refresh).
for bank n and the commands shown are those allowed to be issued to bank m, assuming
that bank m is in such a state that the given command is allowable). Exceptions are covered
in the notes below.
Idle:
Row active: A row in the bank has been activated and
Read:
Write:
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
CAS#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
The bank has been precharged,
complete.
accesses and no register accesses are in progress.
A READ burst has been initiated with auto precharge disabled and has not
yet terminated.
A WRITE burst has been initiated with auto precharge disabled and has not
yet terminated.
WE#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command otherwise allowed to bank m
ACTIVATE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start new READ burst
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVATE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
66
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command/Action
512Mb: x4, x8, x16 DDR2 SDRAM
t
RP has been met, and any READ burst is
t
RCD has been met. No data bursts/
©2004 Micron Technology, Inc. All rights reserved.
t
XSNR has been met
Commands
7, 9, 10
Notes
7, 10
7, 8
7, 8
7
7
7
7
7
7