mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 111

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Figure 75:
Figure 76:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
DDR2_x4x8x16_Core2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
CK#
CKE
A10
CK#
CKE
A10
DQ
CK
DQ
CK
WRITE
WRITE
Valid
Valid
T0
T0
WRITE-to-Power-Down or Self-Refresh Entry
WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry
Notes:
Notes:
NOP
NOP
T1
T1
1. Power-down or self refresh entry may occur after the WRITE burst completes.
1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may occur
2. WR is programmed through MR9–MR11 and represents (
WL = 3
WL = 3
1 x
next integer
t
CK later at Ta1, prior to
NOP
NOP
T2
T2
t
CK.
NOP
DO
DO
NOP
T3
T3
DO
DO
111
t
RP being satisfied.
Valid
Valid
DO
DO
T4
T4
DO
DO
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Indicates A Break in
Time Scale
Valid
Valid
T5
T5
512Mb: x4, x8, x16 DDR2 SDRAM
WR 2
Valid 1
Valid
t WTR
Ta0
T6
t
WR [MIN]ns/
Transitioning Data
self refresh entry 1
self refresh entry
Power-down or
Power-down or
Transitioning Data
©2004 Micron Technology, Inc. All rights reserved.
NOP 1
NOP
Ta1
T7
t
CK) rounded up to
Operations
t CKE (MIN)
t CKE (MIN)
Ta2
T8
Don’t Care
Don’t Care