mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 21

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

FBGA Package Capacitance
Table 4:
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
512Mb_DDR2_x4x8x16_D2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls,
CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address
balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Input Capacitance
Notes:
1. This parameter is sampled. V
2. The input capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters but rather targets.
4. Reduce MAX limit by 0.25pF for -25, -25E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -25, -25E speed devices.
6. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum
T
balls, reflecting the fact that they are matched in loading.
any given device.
amount for any given device.
C
= 25°C, V
OUT
(
DC
) = V
DD
Symbol
C
Q/2, V
C
C
C
C
DCK
C
DIO
CK
DI
IO
I
DD
21
OUT
= +1.8V ±0.1V, V
(peak-to-peak) = 0.1V. DM input is grouped with I/O
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
1.0
1.0
2.5
–
–
–
512Mb: x4, x8, x16 DDR2 SDRAM
DD
Q = +1.8V ±0.1V, V
FBGA Package Capacitance
Max
0.25
0.25
2.0
2.0
4.0
0.5
©2004 Micron Technology, Inc. All rights reserved.
Units
REF
pF
pF
pF
pF
pF
pF
= V
SS
, f = 100 MHz,
Notes
2, 3
1, 4
2, 3
1, 5
3, 6
1