mt47h64m8b6-5e-it Micron Semiconductor Products, mt47h64m8b6-5e-it Datasheet - Page 22

• Manufacturer Part Number: mt47h64m8b6-5e-it
• Description: 512mb X4, X8, X16 Ddr2 Sdram
• Manufacturer: Micron Semiconductor Products

Electrical Specifications – Absolute Ratings
Table 5:
Temperature and Thermal Impedance
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
512Mb_DDR2_x4x8x16_D2.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; Any input 0V ≤ V
not under test = 0V
Output leakage current; 0V ≤ V
disabled
V
DD
DD
DD
REF
Q supply voltage relative to V
L supply voltage relative to V
supply voltage relative to V
leakage current; V
Absolute Maximum Ratings
Notes:
REF
= Valid V
Stresses greater than those listed in Table 5 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions oustide those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 on page 23, be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances
correctly. The thermal impedances are listed in Table 7 on page 24 for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed in Table 7 on page 24. For designs that are expected to last several years and
require the flexibility to use several DRAM die shrinks, consider using final target theta
values (rather than existing values) to account for increased thermal impedances from
the die size reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
OUT
SS
SS
DD
REF
SS
C
SS
L
, V
≤ V
specification is not exceeded. In applications where the device’s ambient temper-
Q
REF
≤ 0.6 × V
DD
DD
level
IN
Q, and V
Q; DQ and ODT
≤ V
DD
DD
Q; however, V
; All other balls
DD
L must be within 300mV of each other at all times.
22
REF
Electrical Specifications – Absolute Ratings
may be ≥ V
V
Symbol
IN
V
V
I
V
VREF
, V
DD
I
DD
OZ
DD
I
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q
OUT
L
DD
512Mb: x4, x8, x16 DDR2 SDRAM
Q provided that V
Min
–1.0
–0.5
–0.5
–0.5
DD
–5
–5
–2
Q.
Max
+2.3
+2.3
+2.3
+2.3
+5
+5
+2
©2004 Micron Technology, Inc. All rights reserved.
REF
≤ 300mV.
Units
µA
µA
µA
V
V
V
V
Notes
1, 2
1
1
3