mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 75

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 43:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. G 07/08 EN
Case 1:
Case 2:
Command
BA0, BA1
Address
t
DQS
t
DQS
DQ
DQ
CK#
CKE
A10
DM
AC (MIN) and
AC (MAX) and
CK
4
1
1
Bank Read – with Auto Precharge
t
t
IS
IS
NOP
T0
t
DQSCK (MIN)
t
Notes:
t
DQSCK (MAX)
5
t
IH
IH
ACTIVE
Bank x
t
t
1. D
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. NOP commands are shown for ease of illustration; other commands may be valid at these
5. Refer to Figure 28 on page 59 and Figure 29 on page 60 for detailed DQS and DQ timing.
IS
IS
Row
Row
T1
times.
t
t
IH
IH
OUT
t
CK
n = data-out from column n.
t
t
RAS
RCD
t
RC
NOP
T2
5
t
CH
t
CL
t
3
IS
Bank x
READ
Col n
t
LZ (MIN)
T3
2
t
IH
75
t
CL = 2
RPRE
t
t
LZ (MIN)
AC (MIN)
NOP
T4
5
t
AC (MAX)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
D
RPRE
OUT
n
1Gb: x16, x32 Mobile DDR SDRAM
t
DQSCK (MIN)
NOP
D
n + 1
T5
OUT
D
t
OUT
n
DQSCK (MAX)
5
T5n
D
n + 2
OUT
D
n + 1
OUT
t
RP
NOP
D
n + 3
T6
t
D
n + 2
RPST
OUT
OUT
Don’t Care
5
©2007 Micron Technology, Inc. All rights reserved
T6n
t
HZ (MAX)
t
D
n + 3
RPST
OUT
Timing Diagrams
NOP
T7
5
Transitioning Data
ACTIVE
Bank x
Row
Row
T8