mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 22

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 10:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
1gb_ddr_mobile_sdram_t48m_density__2.fm - Rev. G 07/08 EN
Parameter
Address and control input setup
time (fast slew rate)
Address and control input setup
time (slow slew rate)
Address and control input pulse
width
LOAD MODE REGISTER command
cycle time
DQ–DQS hold, DQS to first DQ to
go non-valid, per access
Data hold skew factor
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE/ACTIVE-to-
AUTO REFRESH command period
ACTIVE-to-READ or WRITE delay
Refresh period
Average periodic refresh interval
AUTO REFRESH command period
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
Read of SRR to next valid command
SRR-to-READ
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command
delay
Exit power-down mode to first
valid command
Exit SELF REFRESH to first valid
command
Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes: 1–9 apply to all the parameters in this table; V
Notes:
1. All voltages referenced to V
2. All parameters assume proper device initialization.
3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nominal
4. The circuit shown below represents the timing reference load used in defining the relevant
CL = 3
CL = 2
supply voltage levels, but the related specifications and device operation are guaranteed
for the full voltage ranges specified.
timing parameters of the device. It is not intended to be either a precise representation of
the typical system environment or a depiction of the actual load presented by a production
tester. System designers will use IBIS or other simulation tools to correlate the timing refer-
ence load to system environment. Specifications are correlated to production test condi-
Symbol
t
t
WPRES
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
t
MRD
t
t
RPRE
RPRE
t
t
t
RPST
t
WTR
QHS
RCD
REFI
RRD
t
t
IPW
RAS
t
RFC
t
SRC
SRR
t
XSR
REF
WR
QH
RC
XP
IS
IS
RP
F
S
CL + 1
t
t
Min
0.25
QHS
110
138
HP -
0.9
1.1
2.3
0.9
0.5
0.4
0.4
40
55
15
15
10
15
2
–
–
–
2
0
2
2
-5
70,000
Max
0.5
7.8
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
SS
22
.
CL + 1
t
t
Min
58.2
16.2
16.2
10.8
0.25
QHS
110
138
HP -
1.0
1.2
2.5
0.9
0.5
0.4
0.4
42
15
2
–
–
–
2
0
2
2
DD
-54
/V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70,000
Max
DD
0.5
7.8
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q = 1.70–1.95V
1Gb: x16, x32 Mobile DDR SDRAM
CL + 1
t
t
Min
0.25
QHS
110
138
HP -
2.6
1.1
1.2
0.9
0.5
0.4
0.4
42
60
18
18
12
15
2
–
–
–
2
0
1
2
-6
70,000
Max
0.65
7.8
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Specifications
CL + 1
t
t
Min
t
22.5
22.5
0.25
QHS
110
138
HP -
©2007 Micron Technology, Inc. All rights reserved
1.3
1.5
0.9
0.5
0.4
0.4
IS +
t
45
15
75
15
IH
2
–
–
–
2
0
1
2
-75
70,000
Max
0.75
7.8
1.1
1.1
0.6
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit Notes
t
t
t
t
t
t
t
t
t
t
ms
ns
ns
ns
CK
ns
ns
ns
ns
ns
µs
ns
ns
CK
CK
CK
ns
CK
CK
CK
ns
CK
ns
CK
CK
ns
14, 20
12, 16
23, 24
15
21
22
25
26
27