mt46h32m32lfcm-6 Micron Semiconductor Products, mt46h32m32lfcm-6 Datasheet - Page 70

• Manufacturer Part Number: mt46h32m32lfcm-6
• Description: 1gb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 39:
PDF: 09005aef82ce3074/Source: 09005aef82cd0158
ddr_mobile_sdram_cmd_op_timing_dia_fr5.08__3.fm - Rev. G 07/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Odd Number of Data, Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 4 is shown; one data element is written, three are masked.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T2 and T2n (nominal case) to register DM.
D
t
b
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
IN
NOP
D
T1
b = data-in for column b; D
b
IN
D
b
IN
T1n
NOP
T2
t
WTR
T2n
70
Bank a,
READ
OUT
Col b
T3
n = data-out for column n.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x16, x32 Mobile DDR SDRAM
NOP
T4
CL = 3
CL = 3
CL = 3
Don’t Care
T5
NOP
©2007 Micron Technology, Inc. All rights reserved
T5n
Timing Diagrams
Transitioning Data
D
D
D
OUT
n
OUT
n
OUT
n
T6
NOP
D
n + 1
D
n + 1
D
n + 1
OUT
OUT
OUT
T6n