MT18VDDF6472G-202 Micron, MT18VDDF6472G-202 Datasheet - Page 24
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MT18VDDF6472G-202
Manufacturer Part Number
MT18VDDF6472G-202
Description
184-PIN REGISTERED DDR SDRAM DIMM
Manufacturer
Micron
Datasheet
1.MT18VDDF6472G-202.pdf
(26 pages)
SERIAL PRESENCE-DETECT MATRIX
(Note: 1)
NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
64 Meg x72 184 Pin Registered DDR SDRAM DIMM
DDF18C64x72G_A.p65 – Pub. 02/02
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
1
2
3
4
5
6
7
8
9
SDRAM DEVICE ATTRIBUTES: GENERAL
2. Value for -26A
3. The value of
NUMBER OF SPD BYTES USED BY MICRON
TOTAL NUMBER OF BYTES IN SPD DEVICE
FUNDAMENTAL MEMORY TYPE
NUMBER OF ROW ADDRESSES ON ASSEMBLY
NUMBER OF COLUMN ADDRESSES ON ASSEMBLY
NUMBER OF PHYSICAL BANKS ON DIMM
MODULE DATA WIDTH
MODULE DATA WIDTH (continued)
MODULE VOLTAGE INTERFACE LEVELS (V
SDRAM CYCLE TIME, (
(CAS LATENCY = 2.5) (Note 2)
SDRAM ACCESS FROM CLOCK,(
(CAS LATENCY = 2.5)
MODULE CONFIGURATION TYPE
REFRESH RATE/TYPE
SDRAM DEVICE WIDTH (PRIMARY SDRAM)
ERROR-CHECKING SDRAM DATA WIDTH
MINIMUM CLOCK DELAY, BACK-TO-BACK
RANDOM COLUMN ACCESS
BURST LENGTHS SUPPORTED
NUMBER OF BANKS ON SDRAM DEVICE
CAS LATENCIES SUPPORTED
CS LATENCY
WE LATENCY
SDRAM MODULE ATTRIBUTES
SDRAM CYCLE TIME, (
(CAS LATENCY = 2)
SDRAM ACCESS FROM CK , (
(CAS LATENCY = 2)
SDRAM CYCLE TIME, (
(CAS LATENCY = 1.5)
SDRAM ACCESS FROM CK , (
(CAS LATENCY = 1.5)
MINIMUM ROW PRECHARGE TIME, (
MINIMUM ROW ACTIVE TO ROW ACTIVE, (
MINIMUM RAS# TO CAS# DELAY, (
MINIMUM ACTIVE TO PRECHARGE TIME, (
DESCRIPTION
t
RAS used for the -26A/-265 module is calculated from
t
CK set to 7ns (0x70) for optimum BIOS compatibility. Actual device spec. value is 7.5ns.
t
t
t
CK)
CK)
CK)
t
t
AC)
AC)
t
AC)
t
RCD)
t
RP)
DD
t
t
RAS) (Note 3)
RRD)
Q)
184-PIN REGISTERED DDR SDRAM DIMM
24
Fast / Conconcurrent A/P
20ns (-26A/-265/-202)
15ns (-26A/-265/-202)
20ns (-26A/-265/-202)
ENTRY (VERSION)
0.75ns (-26A/-265)
0.75ns (-26A/-265)
REGISTERED, PLL
7.5ns (-335/-26A)
45ns (-26A/-265)
10ns (-265/-202)
t
7.81µs /SELF
RC-
SDRAM DDR
7.5ns (-265)
0.7ns (-335)
0.8ns (-202)
0.7ns (-335)
0.8ns (-202)
18ns (-335)
12ns (-335)
18ns (-335)
42ns (-335)
40ns (-202)
SSTL 2.5V
7ns (-26A)
6ns (-335)
8ns (-202)
1 clock
2, 4, 8
2, 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
128
256
ECC
N/A
N/A
RP. Actual device spec. value is 40ns.
13
11
72
x4
x4
1
0
4
0
1
MT18VDDF6472G (Hex)
512MB (x72)
PRELIMINARY
0D
A0
2A
2D
80
08
07
0B
01
48
00
04
60
70
75
80
70
75
80
02
82
04
04
01
0E
04
0C
01
02
26
C0
75
70
75
80
00
00
48
50
30
3C
48
50
28
©2002, Micron Technology, Inc.