MT18VDDF6472G-202 Micron, MT18VDDF6472G-202 Datasheet - Page 22

• Manufacturer Part Number: MT18VDDF6472G-202
• Description: 184-PIN REGISTERED DDR SDRAM DIMM
• Manufacturer: Micron

EEPROM DEVICE SELECT CODE
The most significant bit (b7) is sent first
EEPROM OPERATING MODES
NOTE: 1. X = V
SERIAL PRESENCE-DETECT EEPROM TIMING
PARAMETERS
64 Meg x72 184 Pin Registered DDR SDRAM DIMM
DDF18C64x72G_A.p65 – Pub. 02/02
Memory Area Select Code (two arrays)
Protection Register Select Code
MODE
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SYMBOL
t
t
t
t
t
t
F
AA
BUF
DH
HD:DAT
HD:STA
SDA OUT
SDA IN
SCL
IH
or V
IL
.
t SU:STA
RW BIT
0
1
1
1
0
0
MIN
300
0.3
4.7
0
4
t F
SPD EEPROM TIMING DIAGRAM
t HD:STA
WC
V
V
MAX
X
X
X
X
300
t LOW
3.5
t AA
IL
IL
1
BYTES
UNITS
184-PIN REGISTERED DDR SDRAM DIMM
µs
µs
ns
ns
µs
µs
1
1
1
1
16
t HIGH
1
t HD:DAT
DEVICE TYPE IDENTIFIER
b7
1
0
22
START, Device Select, RW = ‘0’, Address
START, Device Select, RW = ‘1’
INITIAL SEQUENCE
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
b6
SYMBOL
t
t
t
t
t
t
0
1
t DH
R
HIGH
LOW
SU:DAT
SU:STA
SU:STO
t R
b5
t SU:DAT
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b4
0
0
b3
E2
E2
CHIP ENABLE
512MB (x72)
MIN
b2
E1
E1
250
4.7
4.7
4.7
t SU:STO
4
PRELIMINARY
t BUF
UNDEFINED
©2002, Micron Technology, Inc.
MAX
b1
E0
E0
1
UNITS
RW
RW
RW
b0
µs
µs
µs
ns
µs
µs