MT58L256L32D Micron Semiconductor Products, Inc., MT58L256L32D Datasheet - Page 20

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MT58L256L32D

Manufacturer Part Number
MT58L256L32D
Description
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time ZZ is in a HIGH state. After
the device enters SNOOZE MODE, all inputs except ZZ
become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L512L18D_D.p65 – Rev. 2/02
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Outputs (Q)
ALL INPUTS
(except ZZ)
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
SNOOZE MODE is a low-current, “power-down”
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t ZZI
t ZZ
I
ISB2Z
SNOOZE MODE WAVEFORM
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
CONDITIONS
ZZ
V
IH
20
High-Z
the device to enter SNOOZE MODE. When ZZ becomes a
logic HIGH, I
met. Any READ or WRITE operation pending when the
device enters SNOOZE MODE is not guaranteed to com-
plete successfully. Therefore, SNOOZE MODE must not
be initiated until valid pending operations are completed.
ZZ is an asynchronous, active HIGH input that causes
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
I
t
t
RZZI
SB
t
RZZ
ZZI
ZZ
2Z
SB
2
Z
is guaranteed after the setup time
2(
MIN
t
0
KC)
DESELECT or READ Only
t RZZI
2(
2(
MAX
10
t
t
KC)
KC)
t RZZ
UNITS
©2002, Micron Technology, Inc.
mA
ns
ns
ns
ns
DON’T CARE
NOTES
1
1
1
1
t
ZZ is

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