MT58L256L32D Micron Semiconductor Products, Inc., MT58L256L32D Datasheet - Page 16

• Manufacturer Part Number: MT58L256L32D
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

FBGA CAPACITANCE
TQFP THERMAL RESISTANCE
FBGA THERMAL RESISTANCE
NOTE: 1. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L512L18D_D.p65 – Rev. 2/02
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Pins
(Bottom)
DESCRIPTION
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
2. FBGA preliminary package data.
Test conditions follow standard test methods 1-layer
and procedures for measuring thermal
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
impedance, per EIA/JESD51.
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
T
A
CONDITIONS
CONDITIONS
= 25°C; f = 1 MHz
CONDITIONS
16
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
C
C
C
CK
O
I
TYP
2.5
2.5
SYMBOL
SYMBOL
4
JA
JA
JC
JC
JB
MAX
3.5
3.5
5
TYP
TYP
40
40
17
8
9
UNITS
©2002, Micron Technology, Inc.
pF
pF
pF
UNITS NOTES
UNITS NOTES
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES
2
2
2
1
1
2
2
2