MT58L256L32D Micron Semiconductor Products, Inc., MT58L256L32D Datasheet - Page 17

• Manufacturer Part Number: MT58L256L32D
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

I
(0°C
NOTE: 1. I
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L512L18D_D.p65 – Rev. 2/02
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
T
2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
3. Typical values are measured at 3.3V, 25°C and 10ns cycle time.
4. This parameter is sampled.
A
greater output loading.
device is active (not in power-down mode).
DD
70°C; V
is specified with no output current and increases with faster cycle times. I
V
V
DD
ADSC#, ADSP#, GW#, BWx#, ADV#
IH
ADSC#, ADSP#, GW#, BWx#, ADV#
IH
All inputs
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
, V
; All inputs
; All inputs
or
Device selected; All inputs
Device deselected; V
Device deselected; V
Device deselected; V
DD
Device selected; V
V
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
DD
All inputs
V
Cycle time
Cycle time
IH
= MAX; Outputs open
; Cycle time
CONDITIONS
V
SS
V
V
SS
SS
+ 0.2 or
+ 0.2 or
+ 0.2 or
V
t
t
IL
KC (MIN)
KC (MIN)
or
DD
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
DD
DD
DD
t
KC (MIN);
= MAX;
= MAX;
= MAX;
= MAX;
V
V
IH
DD
V
V
;
DD
DD
- 0.2;
V
IL
- 0.2;
- 0.2;
17
SYMBOL
I
I
I
I
I
DD
SB
SB
SB
DD
2
3
4
1
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TYP
225
0.4
55
55
8
475
110
110
10
25
-6
DD
Q increases with faster cycle times and
MAX
-7.5
375
90
10
25
90
300
-10
85
10
25
85
©2002, Micron Technology, Inc.
UNITS NOTES
mA
mA
mA
mA
mA
1, 2, 3
1, 2, 3
2, 3
2, 3
2, 3