MT58L256L32D Micron Semiconductor Products, Inc., MT58L256L32D Datasheet - Page 19

• Manufacturer Part Number: MT58L256L32D
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

TEST CONDITIONS
LOAD DERATING CURVES
SRAM timing is dependent upon the capacitive loading
on the outputs.
voltage curves.
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L512L18D_D.p65 – Rev. 2/02
Input pulse levels .................. V
Input rise and fall times ..................................... 1ns
Input timing reference levels ...................... V
Output reference levels ............................ V
Output load ............................. See Figures 1 and 2
Micron 512K x 18, 256K x 32, and 256K x 36 SyncBurst
Consult the factory for copies of I/O current versus
.................... V
IH
IL
= (V
= (V
DD
DD
/2.2) + 1.5V
/2.2) - 1.5V
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
DD
DD
Q/2.2
/2.2
19
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.3V I/O OUTPUT LOAD EQUIVALENT
3.3V I/O OUTPUT LOAD EQUIVALENT
Q
Q
351
Z = 50
O
Figure 1
Figure 2
+3.3V
V = 1.5V
T
317
5pF
©2002, Micron Technology, Inc.
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