MT58L128L32D1 Micron Semiconductor Products, Inc., MT58L128L32D1 Datasheet - Page 19

• Manufacturer Part Number: MT58L128L32D1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

AC TEST CONDITIONS
LOAD DERATING CURVES
SRAM timing is dependent upon the capacitive load-
ing on the outputs.
voltage curves.
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_F.p65 – Rev. F, 1/03 EN
Input pulse levels ................. V
Input rise and fall times .................................... 1ns
Input timing reference levels ..................... V
Output reference levels ........................... V
Output load ........................... See Figures 1 and 2
Micron 256K x 18, 128K x 32, and 128K x 36 SyncBurst
Consult the factory for copies of I/O current versus
................... V
IH
IL
= (V
= (V
DD
DD
/2.2) + 1.5V
/2.2) - 1.5V
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
DD
DD
Q/2.2
/2.2
19
4Mb: 256K x 18, 128K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Output Load Equivalents
Q
Q
351
Z = 50Ω
O
Figure 1
Figure 2
+3.3V
V = 1.5V
T
317
5pF
50Ω
©2003, Micron Technology, Inc.