MT58L128L32D1 Micron Semiconductor Products, Inc., MT58L128L32D1 Datasheet - Page 16

• Manufacturer Part Number: MT58L128L32D1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

I
(0°C ≤ T
NOTE: 1. I
4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
MT58L256L18D1_F.p65 – Rev. F, 1/03 EN
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means device
3. Typical values are measured at 3.3V, 25°C and 10ns cycle time.
A
≤ +70°C; V
greater output loading.
is active (not in power-down mode).
DD
is specified with no output current and increases with faster cycle times. I
DD
, V
V
V
ADSC#, ADSP#, GW#, BWx#, ADV# ≥
ADSC#, ADSP#, GW#, BWx#, ADV# ≥
DD
IH
IH
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
All inputs ≤ V
; All inputs ≤ V
; All inputs ≤ V
or ≥ V
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
Device selected; All inputs ≤ V
Device deselected; V
Device deselected; V
Device deselected; V
Device selected; V
V
DD
All inputs ≤ V
Cycle time ≥
Cycle time ≥
IH
= MAX; Outputs open
; Cycle time ≥
CONDITIONS
SS
SS
SS
+ 0.2 or ≥ V
+ 0.2 or ≥ V
+ 0.2 or ≥ V
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
t
IL
t
KC (MIN)
KC (MIN)
or ≥ V
DD
DD
DD
DD
t
KC (MIN);
= MAX;
= MAX;
= MAX;
= MAX;
IH
DD
;
DD
DD
- 0.2;
16
IL
- 0.2;
- 0.2;
4Mb: 256K x 18, 128K x 32/36
SYM
I
I
I
I
I
DD
SB
SB
SB
DD
2
3
4
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TYP
225
0.4
55
55
8
DD
Q increases with faster cycle times and
475
110
110
-6
10
25
MAX
-7.5
375
90
10
25
90
-10 UNITS NOTES
300
85
10
25
85
©2003, Micron Technology, Inc.
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