MT28C6428P20 Micron Semiconductor Products, Inc., MT28C6428P20 Datasheet - Page 6

• Manufacturer Part Number: MT28C6428P20
• Description: 4 Meg X 16 Asynchronous/page Flash 512K X 16 SRAM Combo Memory
• Manufacturer: Micron Semiconductor Products, Inc.

BALL DESCRIPTIONS (continued)
4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory
MT28C6428P20_3.p65 – Rev. 3, Pub. 7/02
67-BALL FBGA
H2, H10, H11,
A1, A2, A11,
A12, C4, H1,
C6, D5, D6,
NUMBERS
D10, H3
A9, H8
E7, F6
A10
H12
D9
D3
E4
SYMBOL
F_V
F_V
F_V
S_V
S_V
V
NC
CC
–
Q
CC
CC
PP
SS
SS
Supply
Supply
Supply
Supply
Supply
Supply
Input/
TYPE
–
–
Flash Program/Erase Power Supply: [0.9V–2.2V or 11.4V–12.6V].
Operates as input at logic levels to control complete device protection.
Provides backward compatibility for factory programming when driven
to 11.4V–12.6V. A lower F_V
Contact factory for more information.
Flash Power Supply: [1.70V–1.90V or 1.80V–2.20V]. Supplies power for
device operation.
Flash Specific Ground: Do not float any ground ball.
SRAM Power Supply: [1.70V–1.90V or 1.80V–2.20V]. Supplies power for
device operation.
SRAM Specific Ground: Do not float any ground ball.
I/O Power Supply: [1.70–1.90V or 1.80V–2.20V].
No Connect: Lead is not internally connected; it may be driven or
floated.
Contact balls not mounted; corresponding position on PCB can be used
to reduce routing complexity.
4 MEG x 16 ASYNCHRONOUS/PAGE FLASH
512K x 16 SRAM COMBO MEMORY
6
PP
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
voltage range (0.0V–2.2V) is available.
©2002, Micron Technology, Inc.
ADVANCE