MT28C6428P20 Micron Semiconductor Products, Inc., MT28C6428P20 Datasheet - Page 33
MT28C6428P20
Manufacturer Part Number
MT28C6428P20
Description
4 Meg X 16 Asynchronous/page Flash 512K X 16 SRAM Combo Memory
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT28C6428P20.pdf
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COMBINED DC CHARACTERISTICS
NOTE: 1. All currents are in RMS unless otherwise noted.
4 Meg x 16 Asynchronous/Page Flash 512K x 16 SRAM Combo Memory
MT28C6428P20_3.p65 – Rev. 3, Pub. 7/02
DESCRIPTION
S_V
Supply Current – Random
Access Mode
S_V
Supply Current – Page Access
Mode
Deep Power-Down Current
F_V
(Read, Standby Erase Suspend,
Program Suspend)
CC
CC
PP
Current
Read/Write Operating
Read/Write Operating
2. V
3. 12V F_V
4. APS mode reduces I
5. Test conditions: Vcc = V
6. I
add a current draw of I
CC 6
IL
may decrease to -0.4V and V
and I
PP
CC 7
is supported for a maximum of 100 cycles and may be connected for up to 10 cumulative hours.
values are valid when the device is deselected. Any read operation performed while in suspend mode will
CC
to approximately I
CC 1
CC
(MAX), CE# = V
or I
CC 2
CONDITIONS
V
V
IH
chip enabled,
chip enabled,
F_V
F_V
.
IN
IN
may increase to V
= V
= V
I
I
PP
PP
OL
OL
≤ F_V
≥ F_V
IH
IH
1
= 0
= 0
4 MEG x 16 ASYNCHRONOUS/PAGE FLASH
CC 3
IL
(continued)
or V
or V
, OE# = V
levels.
CC
CC
IL
IL
SYMBOL
CC
IH
33
512K x 16 SRAM COMBO MEMORY
. All other inputs = V
Q + 0.3V for durations not to exceed 20ns.
I
I
I
CC
CC
I
CC
PP
10
11
9
1
F_V
MIN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.5
50
–
–
–
CC
/V
IH
CC
or V
Q = 1.70V–1.90V
or 1.80V–2.20V
IL
TYP
.
12
35
2
–
–
MAX
200
15
45
3
1
UNITS NOTES
©2002, Micron Technology, Inc.
mA
mA
µA
µA
µA
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