ST72344S4 STMicroelectronics, ST72344S4 Datasheet - Page 31
ST72344S4
Manufacturer Part Number
ST72344S4
Description
8-bit MCU
Manufacturer
STMicroelectronics
Datasheet
1.ST72344S4.pdf
(247 pages)
Specifications of ST72344S4
Up To 16 Kbytes Program Memory
single voltage extended Flash (XFlash) with readout and write protection, in-circuit and inapplication programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention
256 Bytes Data Eeprom With Readout Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55 °C.
Clock Sources
crystal/ceramic resonator oscillators, high-accuracy internal RC oscillator or external clock
5 Power-saving Modes
Slow, Wait, Halt, Auto-wakeup from Halt and Active-halt
16-bit Timer A With
1 input capture, 1 output compares, external clock input, PWM and pulse generator modes
16-bit Timer B With
2 input captures, 2 output compares, PWM and pulse generator modes
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ST72344xx ST72345xx
5
5.1
5.2
5.3
Data EEPROM
Introduction
The electrically erasable programmable read only memory can be used as a non-volatile
backup for storing data. Using the EEPROM requires a basic access protocol described in
this chapter.
Main features
●
●
●
●
●
●
Figure 7.
Memory access
The Data EEPROM memory read/write access modes are controlled by the E2LAT bit of the
EEPROM Control/Status register (EECSR). The flowchart in
different memory access modes.
EECSR
Up to 32 bytes programmed in the same cycle
EEPROM mono-voltage (charge pump)
Chained erase and programming cycles
Internal control of the global programming cycle duration
Wait mode management
Readout protection
EEPROM block diagram
0
ADDRESS BUS
0
DECODER
ADDRESS
0
0
Doc ID 12321 Rev 5
4
0
DECODER
0
ROW
4
4
E2LAT
E2PGM
128
MULTIPLEXER
DATA
Figure 8
(1 ROW = 32 x 8 BITS)
MEMORY MATRIX
HIGH VOLTAGE
DATA BUS
EEPROM
PUMP
describes these
DATA LATCHES
128
32 x 8 BITS
Data EEPROM
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