ST72344S4 STMicroelectronics, ST72344S4 Datasheet - Page 213

• Manufacturer Part Number: ST72344S4
• Description: 8-bit MCU
• Manufacturer: STMicroelectronics

Specifications of ST72344S4

• Up To 16 Kbytes Program Memory: single voltage extended Flash (XFlash) with readout and write protection, in-circuit and inapplication programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention
• 256 Bytes Data Eeprom With Readout Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55 °C.
• Clock Sources: crystal/ceramic resonator oscillators, high-accuracy internal RC oscillator or external clock
• 5 Power-saving Modes: Slow, Wait, Halt, Auto-wakeup from Halt and Active-halt
• 16-bit Timer A With: 1 input capture, 1 output compares, external clock input, PWM and pulse generator modes
• 16-bit Timer B With: 2 input captures, 2 output compares, PWM and pulse generator modes

ST72344xx ST72345xx
13.8
13.8.1
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
●
●
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
●
●
●
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 103. EMS test results
Symbol
V
V
FESD
FFTB
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
conforms with the IEC 1000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
to induce a functional disturbance
Parameter
Doc ID 12321 Rev 5
DD
and V
DD
pins
V
f
conforms to IEC 1000-4-2
V
f
conforms to IEC 1000-4-4
OSC
OSC
DD
DD
= 5 V, T
= 5 V, T
= 8 MHz
= 8 MHz
Conditions
A
A
= +25 °C,
= +25 °C,
Electrical characteristics
DD
213/247
Level/
and
Class
TBD
TBD