ATxmega64A1 Atmel Corporation, ATxmega64A1 Datasheet - Page 365
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ATxmega64A1
Manufacturer Part Number
ATxmega64A1
Description
Manufacturer
Atmel Corporation
Specifications of ATxmega64A1
Flash (kbytes)
64 Kbytes
Pin Count
100
Max. Operating Frequency
32 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
78
Ext Interrupts
78
Usb Speed
No
Usb Interface
No
Spi
12
Twi (i2c)
4
Uart
8
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Dac Channels
4
Dac Resolution (bits)
12
Temp. Sensor
Yes
Crypto Engine
AES/DES
Sram (kbytes)
4
Eeprom (bytes)
2048
Self Program Memory
YES
External Bus Interface
1
Dram Memory
sdram
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.6 to 3.6
Operating Voltage (vcc)
1.6 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
8
Output Compare Channels
24
Input Capture Channels
24
Pwm Channels
24
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATxmega64A1-AU
Manufacturer:
Atmel
Quantity:
135
Company:
Part Number:
ATxmega64A1U-AU
Manufacturer:
ATMEL
Quantity:
953
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30.7
30.7.1
30.7.2
8077H–AVR–12/09
Flash and EEPROM Programming Sequences
Flash Programming Sequence
EEPROM programming sequence
The EEPROM Page Buffer is automatically erased after:
For Flash and EEPROM page programming, filling the page buffers and writing the page buffer
into Flash or EEPROM is two separate operations. The sequence of this is the same for both
self-programming and external programming.
Before programming a Flash page with the data in the Flash page buffer, the Flash page must
be erased. Programming an un-erased flash Page will corrupt the content in the flash Page.
The flash page buffer can be filled either before the Erase Flash Page operation or between a
Erase Flash Page and a Write Flash Page operation:
Alternative 1, fill the buffer before a split Page Erase and Page Write:
Alternative 2, fill the page buffer before an atomic Page Erase and Write:
Alternative 3, fill the buffer after a Page Erase:
The NVM command set supports both atomic erase and write operations, and split page erase
and page write commands. This split commands enables shorter programming time for each
command and the erase operations can be done during non-time-critical programming execu-
tion. When using alternative 1 or 2 above for self-programming, the Boot Loader provides an
effective Read-Modify-Write feature, which allows the software to first read the page, do the nec-
essary changes, and then write back the modified data. If alternative 3 is used, it is not possible
to read the old data while loading, since the page is already erased. The page address must be
the same for both Page Erase and Page Write operations when using alternative 1 or 3.
Before programming an EEPROM page with the selected number of data bytes stored in the
EEPROM page buffer, the selected locations in the EEPROM page must be erased. Program-
ming an un-erased EEPROM page will corrupt the content in the EEPROM page. The EEPROM
page buffer must be loaded before any Page Erase or Page Write operations:
Alternative 1, fill the page buffer before a Page Erase:
• A system reset.
• Executing the Write EEPROM Page command.
• Executing the Erase and Write EEPROM Page command.
• Executing the Write Lock Bit and Write Fuse commands
• Fill the Flash Page Buffer.
• Perform a Flash Page Erase.
• Perform a Flash Page Write.
• Fill the Flash Page Buffer.
• Perform a Page Erase and Write.
• Perform a Flash Page Erase.
• Fill the Flash Page Buffer.
• Perform a Flash Page Write.
• Fill the EEPROM page buffer with the selected number of bytes.
XMEGA A
365
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