AT32UC3A1512AU Atmel Corporation, AT32UC3A1512AU Datasheet - Page 418

• Manufacturer Part Number: AT32UC3A1512AU
• Manufacturer: Atmel Corporation

Specifications of AT32UC3A1512AU

• Flash (kbytes): 512 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 66 MHz
• Cpu: 32-bit AVR
• # Of Touch Channels: 32
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 69
• Ext Interrupts: 69
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device + OTG
• Spi: 6
• Twi (i2c): 1
• Uart: 4
• Ssc: 1
• Ethernet: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Dac Channels: 2
• Dac Resolution (bits): 16
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 64
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 3.0-3.6 or (1.65-1.95+3.0-3.6)
• Operating Voltage (vcc): 3.0-3.6 or (1.65-1.95+3.0-3.6)
• Fpu: No
• Mpu / Mmu: Yes / No
• Timers: 10
• Output Compare Channels: 16
• Input Capture Channels: 6
• Pwm Channels: 13
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

32058K AVR32-01/12
Figure 28-6. Read Burst, 32-bit SDRAM Access
28.7.3
SDRAMC_A[12:0]
Border Management
D[31:0]
SDWE
SDCS
(Input)
SDCK
RAS
CAS
For a single access or an incremented burst of unspecified length, the SDRAM Controller antici-
pates the next access. While the last value of the column is returned by the SDRAM Controller
on the bus, the SDRAM Controller anticipates the read to the next column and thus anticipates
the CAS latency. This reduces the effect of the CAS latency on the internal bus.
For burst access of specified length (4, 8, 16 words), access is not anticipated. This case leads
to the best performance. If the burst is broken (border, busy mode, etc.), the next access is han-
dled as an incrementing burst of unspecified length.
When the memory row boundary has been reached, an automatic page break is inserted. In this
case, the SDRAM controller generates a precharge command, activates the new row and initi-
ates a read or write command. To comply with SDRAM timing parameters, an additional clock
cycle is inserted between the precharge/active (t
mand. This is described in
Row n
t
RCD
= 3
col a
Figure 28-7
CAS = 2
col b
Dna
below.
col c
Dnb
col d
RP
) command and the active/read (t
Dnc
col e
Dnd
col f
Dne
Dnf
AT32UC3A
RCD
) com-
418