TIM5964-8SL Toshiba, TIM5964-8SL Datasheet

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TIM5964-8SL

Manufacturer Part Number
TIM5964-8SL
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM5964-8SL

Configuration
Single
Gate-source Voltage (max)
5V
Drain Current (max)
7A
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIM5964-8SL
Manufacturer:
Toshiba
Quantity:
1 400
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
Single Carrier Level
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Recommended Gate Resistance(Rg): 150 Ω (Max.)
LOW INTERMODULATION DISTORTION
HIGH POWER
rd
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
IM3=-45 dBc at Pout= 28.5dBm
P1dB=39.5dBm at 5.9GHz to 6.4GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
IDS2
I
I
η
th(c-c)
IM3
GSoff
DS1
DSS
ΔG
gm
GSO
1dB
1dB
add
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
DS
DS
GS
DS
DS
DS
GS
f= 5.9 to 6.4GHz
CONDITIONS
Two-Tone Test
CONDITIONS
= 3A
= 30mA
Po=28.5dBm
= -100μA
= 3V
=
=
= 0V
VDS= 10V
3V
3V
X Rth(c-c)
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=8.5dB at 5.9GHz to 6.4GHz
BROAD BAND INTERNALLY MATCHED FET
MICROWAVE POWER GaAs FET
TIM5964-8SL
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
38.5
MIN.
-1.0
-42
7.5
-5
TYP. MAX.
39.5
TYP. MAX.
1800
-45
8.5
2.2
2.2
-2.5
Rev. Jul. 2006
35
5.2
2.5
±0.6
2.6
2.6
80
-4.0
3.8

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TIM5964-8SL Summary of contents

Page 1

... SYMBOL CONDITIONS GSoff 30mA DSS -100μA GSO GS R Channel to Case th(c-c) TIM5964-8SL UNIT MIN. TYP. MAX. dBm 38.5 39.5 dB 7.5 8.5 ⎯ A 2.2 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 2.2 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 1800 V -1.0 -2.5 ⎯ ...

Page 2

... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-8SL SYMBOL UNIT ...

Page 3

... RF PERFORMANCE V =10V DS ≅2. Pin=31.0dBm 5.8 Output Power(Pout) vs. Input Power(Pin) 42 freq.=6.4GHz 41 V =10V DS ≅2. TIM5964-8SL Output Power vs. Frequency 5.9 6.0 6.1 6.2 Frequency (GHz) Pout ηadd 29 31 Pin(dBm) 3 6.3 6.4 6 ...

Page 4

... Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics -10 V =10V DS ≅2. freq.=6.4GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5964-8SL 80 120 160 Tc (° 200 32 34 ...

Page 5

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-8UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 6

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-8UL SYMBOL ...

Page 7

... RF PERFORMANCE 10V DS ≅ Pin= 29.5dBm 5.7 5 6.15GHz V = 10V DS 41 ≅ TIM5964-8UL Output Power vs. Frequency 5.9 6 6.1 6.2 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 6.3 6.4 6.5 6 ...

Page 8

... TIM5964-8UL Power Dissipation vs. Case Temperature (℃) IM3 vs. Output Power Characteristics - 10V DS ≅ 6.15GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...

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