RD38F2240WWYTQ0SB93 Micron Technology Inc, RD38F2240WWYTQ0SB93 Datasheet - Page 44

• Manufacturer Part Number: RD38F2240WWYTQ0SB93
• Manufacturer: Micron Technology Inc

Specifications of RD38F2240WWYTQ0SB93

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Figure 27: Deep Power Down Exit Timing
9.3.2.3
Table 21: PASR Address Pattern for PSRAM
Datasheet
44
32 Mbit
Device
0
0
0
0
1
1
1
1
A2
Deep Power Down Entry: To enter deep power down, RCR4 is set low, CE# is then
pulled high and is maintained high for the entire time duration that Deep Power Down
mode is desired. To insure proper operation, once CE# is pulled high, it should be
maintained high for minimum of 150 µs before beginning the Deep Power Down Exit
sequence.
Deep Power Down Exit: To exit the deep power down mode the CE# must go low for
minimum 10 µs, followed by a guard time of at least 150 µs where CE# must be
maintained high. Once deep power down is exited, the DPD control bit RCR4 is
automatically reset to 1. All other Control Register contents are unchanged.
PSRAM Partial-Array Self-Refresh RCR Bit
By applying PASR the user can dynamically customize the memory capacity to the
system’s actual need in normal operation mode and standby mode. RCR[2:0] specifies
the active memory array and its location (starting from bottom or top). The memory
parts not used are powered down immediately after the mode register has been
programmed. Advice for the proper register setting including the address ranges is
given in the figure below. PASR is effective in normal operation and standby mode as
soon as it has been configured by register programming.
0
0
1
1
0
0
1
1
A1
0
1
0
1
0
1
0
1
A0
32
16
8
4
0
16
8
4
Density (Mb)
Full Die
1/2 of die
1/4 of die
1/8 of die
None
1/2 of die
1/4 of die
1/8 of die
Active Section
128-Mbit W18 Family with Synchronous PSRAM
000000h – 1FFFFFh
000000h – 0FFFFFh
000000h – 07FFFFh
000000h – 03FFFFh
0
100000h – 1FFFFFh
180000h – 1FFFFFh
1C0000h – 1FFFFFh
Order Number: 311760-10
Address
November 2007