RD38F2240WWYTQ0SB93 Micron Technology Inc, RD38F2240WWYTQ0SB93 Datasheet - Page 18

• Manufacturer Part Number: RD38F2240WWYTQ0SB93
• Manufacturer: Micron Technology Inc

Specifications of RD38F2240WWYTQ0SB93

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Table 7:
Note:
Table 8:
Note:
Datasheet
18
I
I
I
I
I
I
I
V
CC4W
V
CC1P
CC4R
V
I
I
CC1
CC5
CC2
CC3
Density
16-Mbit
32-Mbit
OL
OH
OL
IL
IL
To avoid unnecessary current flow, VCCQ is not allowed to be outside of P-V
On-chip temperature sensor is used for temperature-compensated self-refresh, therefore the standby current values at
70, 45 and 15 °C are for reference only.
Synchronous Burst Write (continuous)
Synchronous Burst Read (continuous)
Async Random Read/Write @ T
PSRAM DC Characteristics (Sheet 2 of 2)
PSRAM Partial-Array Self-Refresh (Typical) Current
Output Leakage Current
Input Leakage Current
Output High Voltage
Output Low Voltage
(Full Array Refresh)
Active Array
Burst Initial Access
Deep Power-Down
Input Low Voltage
Async Page Read
Standby Current
Full
1/2
1/4
1/8
Full
1/2
1/4
1/8
0
0
RC
Min
85
50
40
35
35
30
70
60
55
50
40
o
C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
SS
SS
Deselected
Deselected
SS;
SS;
SS;
SS;
SS;
IN
IN
IN
IN
IN
IN
IN
; P-CS# =
; P-CS# =
= V
= V
= V
= V
= V
= V
= V
I
I
I
I
I
I
I
OH
OUT
OUT
OUT
OUT
OUT
OL
CC
CC
CC
CC
CC
CC
CC
= -0.2 mA
= 0.2 mA
= 0
= 0
= 0
= 0
= 0
—
—
—
or
or
or
or
or
or
or
Typical Standby Current (μA)
70
45
35
35
35
25
65
55
50
45
35
16Mb
32Mb
16Mb
32Mb
16Mb
32Mb
16Mb
32Mb
16Mb
32Mb
16Mb
32Mb
16Mb
32Mb
o
C
128-Mbit W18 Family with Synchronous PSRAM
0.8 x V
-0.2
CC
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
± 0.2 V except during power-up situation.
CCQ
45
40
30
30
30
25
50
45
40
40
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
o
C
0.2 x V
Order Number: 311760-10
110
0.4
20
20
15
15
25
25
25
35
30
35
80
70
70
—
1
1
CCQ
November 2007
15
mA
mA
mA
mA
mA
μA
μA
μA
μA
35
25
25
25
20
45
40
35
35
25
V
V
V
o
C