RD38F2240WWYTQ0SB93 Micron Technology Inc, RD38F2240WWYTQ0SB93 Datasheet - Page 19

• Manufacturer Part Number: RD38F2240WWYTQ0SB93
• Manufacturer: Micron Technology Inc

Specifications of RD38F2240WWYTQ0SB93

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

128-Mbit W18 Family with Synchronous PSRAM
6.3
Figure 5:
Notes:
1.
2.
6.3.1
Table 9:
Note:
6.3.2
Table 10: Synchronous PSRAM Individual Die Capacitance
Note:
7.0
7.1
Note:
7.2
Note:
November 2007
Order Number: 311760-10
C
C
C
C
C
Symbol
Symbol
IN
OUT
IN
OUT
I/O
Test configuration component value for worst case speed conditions.
C
Sampled, not 100% tested. T
Sampled, not 100% tested. T
L
includes jig capacitance.
(Address, CLK, P-CS#, R-OE#, ADV#, WE#, R-UB#, R-LB#)
Device Transient Equivalent Testing Load Circuit
W18 Individual Die Capacitance
Device AC Test Conditions
Flash Die Capacitance
Synchronous PSRAM Die Capacitance
Device AC Characteristics
Flash AC Characteristics
Refer to the Numonyx™ Wireless Flash Memory Datasheet for detailed flash die
information.
PSRAM Asynchronous Read
All PSRAM AC characteristic timing parameters are measured with the default output
drive strength (half drive strength).
(Address, CLK, F-CE#, F-OE#, ADV#, WE#, F-WP#)
O u t p u t
Output Capacitance (Data and WAIT)
I/O
Input/Output Capacitance (DQ)
Output Capacitance (WAIT)
Input Capacitance
Input Capacitance
C
C
Parameter
Parameter
= 25 °C, f = 1 MHz.
= 25 °C, f = 1 MHz.
Z
O
= 5 0 O h m s
Min
V
Min
6
6
—
—
—
C C Q
O h m s
/2
5 0
Max
Max
8
8
6.5
6.5
6.5
Unit
pF
pF
Unit
pF
pF
pF
3 0 p f
C
L
=
V
V
OUT
IN
= 0.0 V to 1.8 V
V
V
Condition
= 0.0 V to 1.8 V
V
Condition
OUT
OUT
IN
= 0.0 V
= 0.0 V
= 0.0 V
Datasheet
19