PIC18F44K20-E/MV Microchip Technology, PIC18F44K20-E/MV Datasheet - Page 102

• Manufacturer Part Number: PIC18F44K20-E/MV
• Description: 16KB, Flash, 768bytes-RAM, 36I/O, 8-bit Family,nanowatt XLP 40 UQFN 5x5x0.5mm TU
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F44K20-E/MV

• Processor Series: PIC18
• Core: PIC18F
• Data Bus Width: 8 bit
• Program Memory Type: Flash
• Program Memory Size: 8 KB
• Data Ram Size: 512 B
• Interface Type: I2C, SPI, SCI, USB, MSSP, RJ11
• Maximum Clock Frequency: 64 MHz
• Number Of Programmable I/os: 35
• Number Of Timers: 4
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: UQFN-40
• Development Tools By Supplier: MPLAB Integrated Development Environment
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 125 C
• Supply Current (max): 30 uA
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
• Number Of I /o: 35
• Eeprom Size: 256 x 8
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 14x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Lead Free Status / Rohs Status: Details

PIC18F2XK20/4XK20
7.6
Data EEPROM memory has its own code-protect bits
in Configuration Words. External read and write
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect Configuration bit. Refer to Section 23.0
“Special Features of the CPU” for additional
information.
7.7
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during
parameter 33).
EXAMPLE 7-3:
DS41303G-page 102
Loop
Operation During Code-Protect
Protection Against Spurious Write
the
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ
BRA
BCF
BSF
Power-up
EEADR
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
0AAh
EECON2
EECON1, WR
EECON1, WR
$-2
EEADR, F
LOOP
EECON1, WREN
INTCON, GIE
DATA EEPROM REFRESH ROUTINE
Timer
period
(T
; Start at address 0
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
; Disable writes
; Enable interrupts
PWRT
,
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
7.8
The data EEPROM is a high-endurance, byte
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated often).
When variables in one section change frequently, while
variables in another section do not change, it is possible
to exceed the total number of write cycles to the
EEPROM (specification D124) without exceeding the
total number of write cycles to a single byte (specification
D120). If this is the case, then an array refresh must be
performed. For this reason, variables that change
infrequently (such as constants, IDs, calibration, etc.)
should be stored in Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
Note:
Using the Data EEPROM
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification.
 2010 Microchip Technology Inc.