FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 80
![MOSFET N-CH 250V 2.8A I2PAK](/photos/26/99/269905/i2pak_sml.jpg)
FQI3N25TU
Manufacturer Part Number
FQI3N25TU
Description
MOSFET N-CH 250V 2.8A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI3N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.2nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQI3N25TU
Manufacturer:
FSC
Quantity:
1 000
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Bipolar Power Transistors – Anti-Saturation Transistors
TO-220 NPN Configuration
KSC5302D
KSC5402DT
KSC5603D
KSC5305D
KSC5338D
TO-252(DPAK) NPN Configuration
KSC5502D
TO-263(D
KSC5603D
Products
2
PAK) NPN Configuration
V
CBO
1000
1600
1000
1200
1600
800
800
(V) V
CEO
400
450
800
400
450
600
800
(V) V
EBO
12
12
12
12
12
12
12
(V)
I
C
2
2
3
5
5
2
3
(A)
P
C
100
100
50
30
75
75
50
(W)
Min
20
14
20
22
15
20
6
Max
35
40
35
–
–
–
–
2-75
Discrete Power Products –
h
FE
@I
0.4
0.4
0.4
0.8
0.2
0.4
C
2
(A) @V
CE
1
1
3
1
1
1
3
(V) Typ (V) Max (V) @I
0.25
0.47
0.31
0.5
0.5
–
–
1.25
0.75
1.25
0.4
0.6
0.4
0.8
V
Bipolar Transistors and JFETs
CE
(sat)
0.25
0.25
0.4
0.4
0.8
0.2
C
2
(A) @I
0.025
0.025
0.04
0.04
0.08
0.02
0.4
B
(A)
t
STG
0.175
0.175
0.65
2.2
2
2
2
(µs) t
0.175
F
0.15
0.2
0.2
0.2
0.2
0.2
(µs)
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