FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 195

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Through-Hole
Note: Refer to individual product datasheet for specific product package dimensions
Bold = preferred package
Discrete
PDF links for all the packaging information is at: http://www.fairchildsemi.com/products/discrete/packaging/pkg.html
KBU
KBPM
Stretch-247
TO-205AF/TO-39
TO-3P/TO-247AD
TO-3P
TO-3PF
TO-92L
TO-92L
TO-92S
TO-92S
TO-92
Package Name
(Continued)
Prefixes Suffixes
(Continued)
MPSH
MPSA
MPSL
MPF
MPS
NDF
BCX
BSS
2N
TIS
BC
BF
BS
PF
PN
SS
U
P
J
MOSFET
X
X
X
X
X
X
X
Bipolar
X
X
X
X
X
X
X
X
X
X
Products
Diode
X
X
X
X
X
X
7-9
JFETs
X
X
X
IGBT
X
X
X
Pkg Method Qty (pcs)
Tape & Reel
Ammo
Ammo
Tube
Tube
Tube
Tube
Tube
Bulk
Bulk
Tray
Box
Packagig Standard
1.2K
1.5K
100
10K
30
30
30
2K
6K
2K
3K
2K
Packaging Information
Reel Dia
(inch)
n/a
n/a
n/a
n/a
n/a
n/a
n/a
14
14
14
Tape Width
(mm)
n/a
n/a
n/a
n/a
n/a
n/a
n/a
41
35
18