FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 105

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
Small Signal Transistors – General Purpose Transistors (Continued)
BSR17A
KST3904
MMBT3904
KST4401
MMBT4400
MMBT4401
KST2222A
BSR14
MMBT2222A
MMBT5962
BC847
BC850
BCX70G
BCX70H
BCX70J
BCX70K
BCW71
MMBT100
MMBT100A
BCX19
BC817
BCW66G
KSC1623
MMBT3416
MMBT6428
MMBT5210
BCV71
MMBTA05
KST2484
MMBT2484
KST05
BC846
KST06
MMBTA06
BSS64
Products
V
CEO
40
40
40
40
40
40
40
40
40
45
45
45
45
45
45
45
45
45
45
45
45
45
50
50
50
50
60
60
60
60
60
65
80
80
80
(V)
V
CBO
120
60
60
60
60
60
60
75
75
75
45
50
50
45
45
45
45
50
75
75
50
50
75
60
50
60
50
80
60
60
60
60
80
80
80
(V)
V
EBO
6
6
6
6
6
6
6
6
6
8
6
5
5
5
5
5
5
6
6
5
5
5
5
5
3
4
5
4
6
5
4
6
4
4
5
(V)
Max (A)
0.05
200
0.2
0.2
0.2
0.6
0.6
0.6
0.6
0.8
0.1
0.1
0.1
0.2
0.2
0.2
0.2
0.5
0.5
0.5
0.5
0.8
0.1
0.5
0.5
0.5
0.1
0.5
0.1
0.5
0.5
I
1
1
–
–
C
Min
100
100
100
100
100
100
100
100
600
110
110
120
180
250
380
110
100
300
100
100
160
250
200
110
100
110
100
50
90
75
50
50
50
20
–
2-100
Discrete Power Products –
Max
1400
300
300
300
300
150
300
300
300
300
800
800
220
310
460
630
220
450
600
600
630
400
600
225
650
600
220
800
500
800
–
–
–
–
–
h
FE
@V
4.5
10
10
10
CE
1
1
1
1
1
1
5
5
5
5
5
5
5
5
1
1
1
1
1
6
5
5
5
1
5
5
1
5
1
1
1
(V) @I
0.01
C
150
150
150
150
150
150
100
100
100
100
100
0.1
0.1
10
10
10
10
10
10
10
10
10
10
2
2
2
2
2
2
2
1
2
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.75
0.75
0.75
0.55
0.55
0.55
0.55
0.25
0.62
0.25
0.25
0.35
0.35
0.25
0.25
0.25
0.3
0.3
0.3
0.2
0.6
0.6
0.4
0.4
0.7
0.7
0.3
0.3
0.6
0.7
0.6
0.2
1
1
1
@I
V
CE (sat)
C
500
500
500
500
500
500
100
100
200
200
500
500
500
100
100
100
100
100
100
100
50
50
50
10
50
50
50
50
10
50
10
10
50
1
1
(mA) @I
1.25
1.25
1.25
1.25
B
0.5
0.1
0.5
0.1
50
50
50
50
50
50
20
20
50
50
50
10
10
10
10
10
15
5
5
5
5
5
3
5
1
1
5
(mA)