FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 176

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Diodes (Continued)
FDH3595
FDH333
1S922
1N3070
1N459
1N459A
1N485B
1N4938
BAV20
FDH400
1S923
1N486B
BAV21
FDLL457A
FDLL4150
FDLL4448
FDLL914A
FDLL914B
FDLL4148
FDLL914
FDLL300
FDLL300A
FDLL3595
FDLL333
FDLL400
FDLL485B
BAV102
BAV103
MMSD4148
MMSD914
MMSD3070
MMBD1705
BAW74
LL-34
SOD-123
SOT-23
Products
Dual & Common Anode
Dual & Common Anode
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
150
150
150
200
200
200
200
200
200
200
200
250
250
100
100
100
100
100
150
150
150
150
200
200
200
250
100
100
200
(V)
RRM
70
75
30
50
I
F (AV)
0.15
(A)
0.5
0.5
0.2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.5
0.5
0.2
0.4
0.2
0.2
0.2
0.3
0.3
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.6
0.6
0.2
0.6
2-171
I
0.25
(A)
FSM
1
1
4
4
1
1
4
4
1
1
4
4
1
1
1
1
1
1
1
1
1
1
4
1
1
1
4
4
2
2
2
1
Discrete Power Products –
V
FM
1.05
1.05
(V)
1.2
1.2
1.1
–
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max
(°C/W)
R
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
350
300
300
300
350
350
312
312
312
357
357
–
θJA
Diodes and Rectifiers
t
rr
3000
3000
(ns)
0.7
50
50
50
50
50
50
50
50
50
Max
–
–
–
–
–
–
–
–
–
–
–
–
4
4
4
4
4
4
4
4
4
I
RM
0.001
0.003
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.001
0.001
0.001
0.003
0.025
0.025
0.025
0.05
0.05
(µA)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
–
Max