FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 19

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SO-8 FLMP
FDS6064N7
FDS6162N7
FDS6064N3
FDS6162N3
FDS7064N7
FDS7064N
FDS7088N7
FDS7088N3
FDS7066N7
FDS7060N7
FDS7066N3
FDS7082N3
FDS7096N3
FDS7288N3
FDS7066SN3
FDS7068SN3
FDS7064SN3
FDS4070N7
FDS4070N3
FDS4072N7
FDS4080N7
FDS4072N3
FDS4080N3
FDS5170N7
FDS3170N7
FDS3172N3
FDS2070N3
FDS2070N7
FDS2170N3
FDS2170N7
FDS7079ZN3
SO-8 FLMP N-Channel
SO-8 FLMP P-Channel
Products
Min. (V)
BV
100
100
150
150
200
200
-30
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
40
60
DSS
Config.
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0045
0.0055
0.0055
0.0055
0.0075
0.0105
0.0075
0.003
0.004
0.005
0.006
0.009
0.045
0.008
0.007
0.009
0.012
0.026
0.078
0.078
0.128
0.128
10V
0.01
0.01
0.03
–
–
–
–
–
–
R
0.015@6V
0.028@6V
0.033@6V
0.088@6V
0.088@6V
DS(ON)
0.0035
0.0035
0.0045
0.0075
0.0055
0.0055
0.0065
0.0095
0.0115
4.5V
0.004
0.007
0.004
0.007
0.008
0.012
0.056
0.006
0.007
0.011
0.012
–
–
–
–
–
–
Max (Ω) @ V
2-14
2.5V
0.004
0.005
0.005
0.006
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
0.006
0.007
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
70
52
70
52
30
30
37
37
43
35
43
38
16
26
41
77
25
47
47
33
30
33
30
51
55
53
38
38
26
26
39
= 5V
I
D
16.5
17.5
20.5
15.3
15.3
12.4
12.4
10.6
6.7
6.7
4.1
4.1
23
23
23
21
16
23
21
23
19
23
14
19
19
16
13
13
16
3
3
(A)
MOSFETs
P
D
3.13
3.13
3.9
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
(W)