FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 28

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SO-14
FDQ7698S
FDQ7238S
FDQ7244S
SO-14 N-Channel
Products
Min. (V)
30 | 30
30 | 30
30 | 30
BV
DSS
(MOSFET & SyncFET)
(MOSFET & SyncFET)
(MOSFET & SyncFET)
Config.
Dual
Dual
Dual
0.0145 | 0.0095 0.016 | 0.0105
0.0145 | 0.0095 0.016 | 0.0105
0.012 | 0.0075
10V
R
DS(ON)
0.016 | 0.009
4.5V
2-23
Max (Ω) @ V
2.5V
GS
–
–
–
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
Discrete Power Products –
Q
@V
g
12 | 43
33 | 48
33 | 48
Typ. (nC)
GS
= 5V
12 | 15
11 | 14
11 | 14
I
D
(A)
MOSFETs
P
D
2.4
2.4
2.4
(W)