FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 210

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
Discrete IGBT (SMPS II)
FG H
30
(Continued)
N 6
S
2
D
D: Integral Reverse Diode
i.e., 2 = SMPS II (UIS, LGC, LVp)
S: SMPS
M: Motor Drive
I: Induction Heating
C: Camera Flash
i.e., (600)
N-Channel or P-Channel
D: 3 Lead TO-252
B: 3 Lead TO-263
P: 3 Lead TO-220
H: 3 Lead TO-247
L: 3 Lead TO-264
J: 3 Lead TO-268
K: 3 Lead TO-247ST
Options
General Application
Intended Application
Voltage Breakdown/100
Polarity
Relative Die Size
Package
Fairchild IGBT
8-17
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