CY8C3446PVI-076 Cypress Semiconductor Corp, CY8C3446PVI-076 Datasheet - Page 80

• Manufacturer Part Number: CY8C3446PVI-076
• Description: PSOC3
• Manufacturer: Cypress Semiconductor Corp
• Series: PSOC™ 3 CY8C34xxr

Specifications of CY8C3446PVI-076

• Package / Case: *
• Voltage - Supply (vcc/vdd): 1.71 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Speed: 50MHz
• Number Of I /o: 25
• Eeprom Size: 2K x 8
• Core Processor: 8051
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Program Memory Size: 64KB (64K x 8)
• Data Converters: A/D 2x12b, D/A 2x8b
• Oscillator Type: Internal
• Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
• Connectivity: EBI/EMI, I²C, LIN, SPI, UART/USART, USB
• Core Size: 8-Bit
• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Technology: CMOS
• Processing Unit: Microcontroller
• Operating Supply Voltage (min): 1.8V
• Operating Supply Voltage (typ): 2.5/3.3/5V
• Operating Supply Voltage (max): 5.5V
• Package Type: SSOP
• Screening Level: Industrial
• Pin Count: 48
• Mounting: Surface Mount
• Rad Hardened: No
• Processor Series: CY8C34
• Core: 8051
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SPI, UART, USB
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 28 to 72
• Number Of Timers: 4
• Operating Supply Voltage: 1.71 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Controller Family/series: (8051) PSOC 3
• No. Of I/o's: 25
• Eeprom Memory Size: 2KB
• Ram Memory Size: 8KB
• Cpu Speed: 50MHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.7 Memory
Specifications are valid for –40 °C ≤ T
except where noted.
11.7.1 Flash
Table 11-54. Flash DC Specifications
Table 11-55. Flash AC Specifications
11.7.2 EEPROM
Table 11-56. EEPROM DC Specifications
Table 11-57. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL))
Table 11-58. NVL DC Specifications
Document Number: 001-53304 Rev. *G
T
T
T
T
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
WRITE
Erase and program voltage
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time
(including JTAG, and so on)
Flash endurance
Flash data retention time
Erase and program voltage
Single byte erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
Description
Description
Description
Description
Description
A
≤ 85 °C and T
PRELIMINARY
J
V
–
–
–
–
–
–
–
Retention period measured from
last erase cycle
–
–
–
Retention period measured from
last erase cycle (up to 100 K cycles)
V
≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
DDD
pin
pin
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
3: CY8C34 Family Datasheet
100k
1.71
1.71
1.71
Min
Min
Min
Min
Min
1M
20
20
–
–
–
–
–
–
–
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
–
–
2
–
–
–
Max
Max
Max
Max
Max
5.5
5.5
5.5
15
10
35
15
15
5
5
–
–
–
–
Page 80 of 102
program/
program/
seconds
cycles
cycles
Units
Units
erase
years
Units
Units
erase
years
Units
ms
ms
ms
ms
ms
ms
V
V
V
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