FDD8426H Fairchild Semiconductor, FDD8426H Datasheet - Page 9

• Manufacturer Part Number: FDD8426H
• Description: MOSFET N/P-CH DUAL 40V TO-252-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8426H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A, 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2735pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab)
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 14 m Ohms, 19 m Ohms
• Forward Transconductance Gfs (max / Min): 53 S, 31 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 12 A, - 10 A
• Power Dissipation: 56 W, 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD8426H Rev.C
©2009 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
0.0001
0.05
0.001
0.1
0.01
2
1
0.1
10
2
1
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
Figure 28. Junction-to-Ambient Transient Thermal Response Curve
θ
JC
Figure 27. Junction-to-Case Transient Thermal Response Curve
= 1.4
10
-3
SINGLE PULSE
R
(
o
Note 1b
C/W
θ
JA
= 96
)
o
C/W
10
-2
10
-3
t, RECTANGULAR PULSE DURATION (sec)
t, RECTANGULAR PULSE DURATION (sec)
10
T
-1
J
9
= 25 °C unless otherwise noted
10
0
10
-2
NOTES:
DUTY FACTOR: D = t
PEAK T
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
1
J
= P
= P
DM
DM
x Z
x Z
P
θJC
P
θJA
DM
DM
1
1
/t
x R
/t
x R
2
2
10
θJC
θJA
t
1
t
2
1
+ T
+ T
t
t
2
2
C
A
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10
10
-1
3