FDD8426H Fairchild Semiconductor, FDD8426H Datasheet - Page 2

• Manufacturer Part Number: FDD8426H
• Description: MOSFET N/P-CH DUAL 40V TO-252-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8426H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A, 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2735pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab)
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 14 m Ohms, 19 m Ohms
• Forward Transconductance Gfs (max / Min): 53 S, 31 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 12 A, - 10 A
• Power Dissipation: 56 W, 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD8426H Rev.C
©2009 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
∆T
∆T
iss
oss
rss
g
g(TOT)
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
I
I
I
I
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1
V
Q2
V
Q1
V
V
Q2
V
V
V
V
V
V
D
D
D
D
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DS
DS
DD
GS
DD
GS
GS
GS
GS
GS
= 250 µA, V
= -250 µA, V
= 250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= 32 V, V
= -32 V, V
= 20 V, V
= -20 V, V
= ±20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= -10 V, I
= -4.5 V , I
= -10 V, I
= 5 V, I
= -5 V, I
= 20 V, I
= 10 V, R
= -20 V, I
= -10 V, R
= 0 V to 10 V
= 0 V to -10 V
= 0 V to 5 V
= 0 V to -5 V
DS
DS
Test Conditions
, I
, I
2
D
D
D
D
D
D
D
GS
D
GEN
D
GS
D
D
= 12 A
GS
GEN
= 12 A,
= -10 A
GS
GS
= 250 µA
= -250 µA
GS
DS
= 12 A
= 12 A, T
= -10 A,
D
= 11 A
= -10 A, T
= -10 A
= 0 V, f = 1MHZ
= 0 V
= 0 V, f = 1MHZ
= -8.3 A
= 0 V
= 0 V
= 0 V
= 0 V
= 6 Ω
= 6 Ω
Q1
V
I
Q2
V
I
D
D
DD
DD
= 12 A
= -10 A
J
= 20 V,
= -20 V,
= 125 °C
J
= 125 °C
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Min
-1.5
-40
1.5
40
2055
1900
Typ
255
330
165
200
-32
9.3
1.1
3.3
9.7
9.7
4.9
6.9
3.7
7.5
6.3
6.6
7.1
35
14
13
19
19
53
31
27
32
38
37
20
20
11
-6
2
2
6
8
www.fairchildsemi.com
±100
±100
2735
2650
Max
-3.0
335
440
245
300
3.0
12
15
22
17
27
30
20
20
10
14
43
51
10
15
53
52
28
28
-1
1
mV/°C
mV/°C
Units
mΩ
µA
nA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S