FDD8426H Fairchild Semiconductor, FDD8426H Datasheet - Page 8

• Manufacturer Part Number: FDD8426H
• Description: MOSFET N/P-CH DUAL 40V TO-252-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8426H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A, 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2735pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab)
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 14 m Ohms, 19 m Ohms
• Forward Transconductance Gfs (max / Min): 53 S, 31 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 12 A, - 10 A
• Power Dissipation: 56 W, 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD8426H Rev.C
©2009 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
100
0.1
10
10
20
10
Figure 21. Gate Charge Characteristics
1
8
6
4
2
0
1
0.01
0.1
0
THIS AREA IS
LIMITED BY r
Figure 23. Unclamped Inductive
SINGLE PULSE
T
R
T
I
J
C
θ
Figure 25. Forward Bias Safe
D
JC
= MAX RATED
= 25
= -10 A
= 1.4
-V
o
Switching Capability
V
0.1
C
DS
DD
o
t
10
AV
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
= -20 V
ds(on)
, TIME IN AVALANCHE (ms)
Q
1
g
T
, GATE CHARGE (nC)
J
= 125
V
DD
1
= -10 V
T
o
C
J
20
= 150
V
DD
10
= -30 V
o
T
10
C
J
= 25
30
o
C
100 ms
100 us
1 ms
10 ms
1 s
100
100 200
500
40
T
J
8
= 25°C unless otherwise noted
1000
5000
1000
100
Figure 24. Maximum Continuous Drain
Figure 26. Single Pulse Maximum Power
60
40
20
100
50
10
0
25
-4
0.1
Figure 22. Capacitance vs Drain
Current vs Case Temperature
f = 1 MHz
V
R
GS
θ
JC
= 0 V
= 1.4
50
-V
to Source Voltage
DS
T
o
C
t, PULSE WIDTH (sec)
, DRAIN TO SOURCE VOLTAGE (V)
V
C/W
,
GS
10
Dissipation
CASE TEMPERATURE (
-3
= -4.5 V
75
1
V
GS
100
= -10 V
10
SINGLE PULSE
R
θ
-2
JC
o
= 1.4
C )
125
10
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o
C
C
C
C/W
iss
oss
rss
10
150
-1
40