FDD8426H Fairchild Semiconductor, FDD8426H Datasheet - Page 7

• Manufacturer Part Number: FDD8426H
• Description: MOSFET N/P-CH DUAL 40V TO-252-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8426H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A, 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2735pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab)
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 14 m Ohms, 19 m Ohms
• Forward Transconductance Gfs (max / Min): 53 S, 31 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 12 A, - 10 A
• Power Dissipation: 56 W, 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD8426H Rev.C
©2009 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
40
30
20
10
40
30
20
10
1.8
1.5
1.2
0.9
0.6
0
0
Figure 15. On- Region Characteristics
1.5
Figure 17. Normalized On-Resistance
0
-75
Figure 19. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
V
GS
-50
DS
= -10 A
vs Junction Temperature
2.0
= -10 V
= -5 V
-
-V
V
T
V
T
GS
DS
-25
J
GS
,
J
1
V
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
= 25
= -3.5 V
GS
DRAIN TO SOURCE VOLTAGE (V)
V
2.5
GS
V
V
= -4 V
GS
GS
0
o
= -4.5 V
T
C
= -10 V
= -6 V
J
= 150
25
µ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
3.0
s
2
o
C
50
3.5
T
75
J
= -55
3
o
100 125 150
C )
o
4.0
C
µ
s
4.5
4
T
J
7
= 25 °C unless otherwise noted
Figure 16. Normalized on-Resistance vs Drain
0.01
0.1
40
10
80
60
40
20
3.0
2.5
2.0
1.5
1.0
0.5
1
0
0.2
Figure 18. On-Resistance vs Gate to
2
Forward Voltage vs Source Current
0
Figure 20. Source to Drain Diode
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
-V
Current and Gate Voltage
= 0 V
T
T
SD
J
-V
J
0.4
= 150
, BODY DIODE FORWARD VOLTAGE (V)
V
= 25
GS
GS
, GATE TO SOURCE VOLTAGE (V)
-
4
Source Voltage
= -3.5 V
10
I
o
D
o
C
C
,
V
DRAIN CURRENT (A)
GS
T
0.6
J
= -4 V
= 125
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -4.5 V
µ
6
o
20
s
C
V
0.8
I
D
GS
= -10 A
= -6 V
T
J
V
= -55
GS
T
8
30
1.0
= -10 V
J
www.fairchildsemi.com
= 25
o
C
o
C
µ
s
1.2
10
40