FDD8426H Fairchild Semiconductor, FDD8426H Datasheet - Page 4

• Manufacturer Part Number: FDD8426H
• Description: MOSFET N/P-CH DUAL 40V TO-252-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8426H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A, 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2735pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab)
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 14 m Ohms, 19 m Ohms
• Forward Transconductance Gfs (max / Min): 53 S, 31 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 12 A, - 10 A
• Power Dissipation: 56 W, 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD8426H Rev.C
©2009 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
1.8
1.5
1.2
0.9
0.6
40
30
20
10
40
30
20
10
0
Figure 3. Normalized On Resistance
0
-75
0.0
Figure 1.
1
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
GS
= 12 A
vs Junction Temperature
= 5 V
= 10 V
V
GS
T
V
V
-25
J
V
DS
GS
,
0.5
On Region Characteristics
= 3.5 V
GS
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
V
DRAIN TO SOURCE VOLTAGE (V)
GS
= 4 V
0
2
= 4.5 V
V
GS
V
T
GS
25
T
J
= 6 V
µ
J
= 25
= 10 V
s
1.0
= 150
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
o
C
o
C
75
3
1.5
o
100 125 150
C )
T
J
= -55
µ
o
s
C
2.0
4
T
J
4
= 25°C unless otherwise noted
0.001
0.01
300
200
100
2.5
2.0
1.5
1.0
0.5
0.1
40
10
1
Figure 2.
0
Figure 4.
0.2
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
2
Figure 6.
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
GS
GS
J
= 150
= 0 V
= 3.5 V
V
SD
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
On-Resistance vs Gate to
o
GS
C
I
10
Source Voltage
D
4
Source to Drain Diode
,
,
DRAIN CURRENT (A)
GATE TO SOURCE VOLTAGE (V)
V
T
T
GS
J
J
= 125
= 25
= 4 V
0.6
o
C
o
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
µ
s
20
6
V
GS
I
D
0.8
= 12 A
= 4.5 V
T
J
= -55
T
J
30
= 25
8
o
www.fairchildsemi.com
1.0
V
C
V
GS
GS
o
C
= 10 V
= 6 V
µ
s
1.2
40
10