FDD8426H Fairchild Semiconductor, FDD8426H Datasheet - Page 5

• Manufacturer Part Number: FDD8426H
• Description: MOSFET N/P-CH DUAL 40V TO-252-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8426H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A, 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2735pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab)
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 14 m Ohms, 19 m Ohms
• Forward Transconductance Gfs (max / Min): 53 S, 31 S
• Drain-source Breakdown Voltage: 40 V, - 40 V
• Continuous Drain Current: 12 A, - 10 A
• Power Dissipation: 56 W, 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD8426H Rev.C
©2009 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
100
20
10
0.1
10
10
1
Figure 7.
0.01
8
6
4
2
0
1
0.1
0
I
SINGLE PULSE
T
R
T
D
Figure 9.
THIS AREA IS
LIMITED BY r
J
C
θ
Figure 11. Forward Bias Safe
= 12 A
JC
= MAX RATED
= 25
= 1.4
o
Switching Capability
V
C
Gate Charge Characteristics
DS
0.1
t
o
AV
C/W
10
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
DS(on)
Q
1
g
, GATE CHARGE (nC)
T
V
J
DD
= 125
= 20 V
20
o
1
V
C
T
J
DD
= 150
= 10 V
10
V
DD
o
C
T
= 30 V
J
10
= 25
30
o
10 ms
100 ms
C
100 us
1 ms
1 s
100 200
100
40
T
J
5
= 25°C unless otherwise noted
1000
5000
1000
80
60
40
20
100
100
0
50
Figure 10.
25
10
0.1
Figure 12.
-4
R
Figure 8.
f = 1 MHz
V
θ
Current vs Case Temperature
JC
GS
= 1.4
= 0 V
50
V
DS
o
Maximum Continuous Drain
Power Dissipation
T
to Source Voltage
C/W
, DRAIN TO SOURCE VOLTAGE (V)
C
,
t, PULSE WIDTH (sec)
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
10
V
GS
-3
75
1
= 4.5 V
100
V
SINGLE PULSE
R
T
GS
10
C
θ
JC
= 25
-2
= 10 V
o
C )
= 1.4
125
10
o
C
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C
C
C
o
rss
oss
C/W
iss
150
10
40
-1