FDD8426H Fairchild Semiconductor, FDD8426H Datasheet

MOSFET N/P-CH DUAL 40V TO-252-4

FDD8426H

Manufacturer Part Number
FDD8426H
Description
MOSFET N/P-CH DUAL 40V TO-252-4
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8426H

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
12A, 10A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
2735pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPak (4 Leads + Tab)
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
14 m Ohms, 19 m Ohms
Forward Transconductance Gfs (max / Min)
53 S, 31 S
Drain-source Breakdown Voltage
40 V, - 40 V
Continuous Drain Current
12 A, - 10 A
Power Dissipation
56 W, 65 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDD8426H Rev.C
©2009 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD8426H
Dual N & P-Channel PowerTrench
N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
Features
Q1: N-Channel
Q2: P-Channel
V
V
I
P
E
T
R
R
D
J
DS
GS
D
AS
θJC
θJC
Max r
Max r
Max r
Max r
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD8426H
DS(on)
DS(on)
DS(on)
DS(on)
= 12 mΩ at V
= 15 mΩ at V
= 17 mΩ at V
= 27 mΩ at V
D1/D2
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package Limited)
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
Dual DPAK 4L
GS
GS
GS
GS
= 10 V, I
= 4.5 V, I
= -10 V, I
= -4.5 V, I
- Continuous (Silicon Limited)
- Continuous
- Pulsed
FDD8426H
Device
S1
G1
D
D
D
D
S2
= 12 A
= 11 A
= -10 A
= -8.3 A
G2
T
C
= 25°C unless otherwise noted
Parameter
TO-252-4L
Package
®
MOSFET
1
G1
General Description
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Applications
Inverter
H-Bridge
T
T
T
C
T
T
A
C
A
A
= 25°C
N-Channel
= 25°C
= 25°C
= 25°C (Note 1a)
= 25°C (Note 1b)
Reel Size
13”
S1
D1
(Note 1)
(Note 3)
(Note 1)
(Note 1)
G2
®
process that has been especially
Tape Width
±20
112
P-Channel
Q1
12mm
40
17
56
12
40
56
D2
-55 to +150
S2
1.4
1.4
3.1
1.3
±20
162
-40
-17
-48
-10
-40
Q2
65
September 2009
www.fairchildsemi.com
2500units
Quantity
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDD8426H

FDD8426H Summary of contents

Page 1

... Thermal Resistance, Junction to Case, Single Operation for Q2 θJC Package Marking and Ordering Information Device Marking Device FDD8426H FDD8426H ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C ® MOSFET General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’ ...

Page 2

... Fall Time f Q Total Gate Charge g(TOT) Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2009 Fairchild Semiconductor Corporation FDD8426H Rev 25°C unless otherwise noted J Test Conditions = 250 µ -250 µ 250 µA, referenced to 25 °C ...

Page 3

... Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA by the user's board design Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting °C, N-ch mH ©2009 Fairchild Semiconductor Corporation FDD8426H Rev 25°C unless otherwise noted J Test Conditions - di/dt = 100 A/µs ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD8426H Rev 25°C unless otherwise noted J 2.5 2.0 1.5 1.0 µ s 0.5 1.5 2.0 300 200 100 50 75 100 125 150 ...

Page 5

... THIS AREA IS LIMITED BY r DS(on) 1 SINGLE PULSE T = MAX RATED 1.4 C/W θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD8426H Rev 25°C unless otherwise noted J 5000 = 1000 100 150 100 1000 100 us ...

Page 6

... DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE R ( Note 1b 0.0001 - Figure 14. ©2009 Fairchild Semiconductor Corporation FDD8426H Rev 25°C unless otherwise noted 1.4 C RECTANGULAR PULSE DURATION (sec C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 7

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 19. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD8426H Rev °C unless otherwise noted J µ Figure 16. Normalized on-Resistance vs Drain 50 75 100 125 150 0 - 0.01 3.5 4.0 4 ...

Page 8

... LIMITED BY r ds(on) SINGLE PULSE MAX RATED 1.4 C/W θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 25. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD8426H Rev 25°C unless otherwise noted J 5000 1000 100 100 500 Figure 24. Maximum Continuous Drain 1000 ...

Page 9

... DUTY CYCLE-DESCENDING ORDER 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE R θ ( Note 1b 0.0001 - Figure 28. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD8426H Rev °C unless otherwise noted RECTANGULAR PULSE DURATION (sec C RECTANGULAR PULSE DURATION (sec ...

Page 10

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C 10 www.fairchildsemi.com ...

Page 11

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDD8426H Rev.C FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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