FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet - Page 7

• Manufacturer Part Number: FDME1034CZT
• Description: MOSFET N/P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1034CZT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 55 mOhms, 95 mOhms
• Drain-source Breakdown Voltage: 20 V, - 20 V
• Continuous Drain Current: 3.4 A, - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 9 S, 7 S
• Gate Charge Qg: 3 nC, 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 0.055ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDME1034CZT Rev.C1
©2010 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
1.6
1.4
1.2
1.0
0.8
0.6
6
4
2
0
Figure 13. On- Region Characteristics
6
4
2
0
0.0
0
Figure 15. Normalized On-Resistance
-75
Figure 17. Transfer Characteristics
V
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
I
-50
= -3 V
= -4.5 V
D
GS
V
= -2.3 A
vs Junction Temperature
DS
= -4.5 V
-V
-V
0.5
-25
= -5 V
V
T
DS
0.5
GS
GS
J
,
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
= -1.5 V
0
T
J
= 25
V
V
GS
GS
25
T
1.0
μ
J
1.0
= - 1.8 V
o
s
= -2.5 V
= 150
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
o
C
75
T
1.5
1.5
J
= -55
100 125 150
o
C )
o
C
μ
s
2.0
2.0
T
J
7
= 25 °C unless otherwise noted
Figure 14. Normalized on-Resistance vs Drain
0.001
0.01
500
400
300
200
100
0.1
10
1
0
Figure 16. On-Resistance vs Gate to
3
2
1
0
0.0
1.0
Forward Voltage vs Source Current
0
Figure 18. Source to Drain Diode
V
V
GS
Current and Gate Voltage
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
-V
1.5
= 0 V
0.2
SD
= -1.5 V
T
-V
J
, BODY DIODE FORWARD VOLTAGE (V)
= 150
GS
Source Voltage
-I
D
2.0
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
o
V
C
2
GS
= -1.8 V
2.5
V
GS
0.6
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
= -2.5 V
J
J
μ
= 25
= 125
s
T
3.0
J
= -55
o
T
C
I
o
D
0.8
C
J
= -2.3 A
4
= 25
V
o
3.5
C
GS
= -3 V
o
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V
C
GS
1.0
4.0
= -4.5 V
μ
s
4.5
1.2
6